型号 PSMN3R0-60ES,127
厂商 NXP Semiconductors
描述 MOSFET N-CH 60V 100A SOT226
PSMN3R0-60ES,127 PDF
代理商 PSMN3R0-60ES,127
标准包装 50
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 100A
开态Rds(最大)@ Id, Vgs @ 25° C 3 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 4V @ 1mA
闸电荷(Qg) @ Vgs 130nC @ 10V
输入电容 (Ciss) @ Vds 8079pF @ 30V
功率 - 最大 306W
安装类型 通孔
封装/外壳 TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装 I2PAK
包装 管件
其它名称 568-6906-5
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